Reliability Condition Monitoring & Health Management Technologies for Wide Band Gap Power Modules

Lead academic: Prof Olayiwola Alatise, University of Warwick

Universities: Bristol, Newcastle, Nottingham and Warwick

Research Highlights: The Reliability and Health Management Theme aims to develop technologies that can improve the reliability of wide band-gap semiconductors by providing a condition monitoring and health management platform for wide band-gap based power electronic modules.

  • Developed novel techniques for investigating threshold voltage shift in SiC and GaN power devices using device coupling capacitances as well as 3rd quadrant conduction characteristics. This is useful for condition monitoring of gate dielectrics in wide band-gap devices known to have less reliable gate dielectric characteristics compared to silicon devices
  • Developed advanced current source gate drivers capable of dynamic control of SiC devices. This can be used for optimising the switching performance and potentially implementing condition monitoring in SiC power devices
  • Made significant progress in the integration and characterisation of copper metallisation for improved reliability in power devices. This is important for improving the reliability of interconnects in power devices which are traditionally based on aluminium and are susceptible to failure modes like wire bond lift-off

RESEARCH OVERVIEW

Understanding the reliability of WBG semiconductors is becoming increasingly   important as these new devices are being used more widely in industrial settings. However, for applications with high failure costs – for example, automotive traction, aerospace and grid connected converters – the uptake of this new technology is slow. By developing technologies that can improve the reliability of these new devices and monitor their health on-line, then the likelihood of uptake of new WBG power modules will be increased. This project aims to do just this, by providing a condition monitoring and health management platform for WBG based power electronic modules.

Publications:

R. Wu, J. O. Gonzalez, Z. Davletzhanova, P. A. Mawby and O. Alatise, “The Potential of SiC Cascode JFETs in Electric Vehicle Traction Inverters,” in IEEE Transactions on Transportation Electrification, vol. 5, no. 4, pp. 1349-1359, Dec. 2019, doi: 10.1109/TTE.2019.2954654.

J. O. Gonzalez, R. Wu, S. Jahdi and O. Alatise, “Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs,” in IEEE Transactions on Industrial Electronics, vol. 67, no. 9, pp. 7375-7385, Sept. 2020, doi: 10.1109/TIE.2019.2945299.

Liu, H. C. P. Dymond, J. Wang, B. H. Stark and S. J. Hollis, “Building blocks for future dual-channel GaN gate drivers: Arbitrary waveform driver, bootstrap voltage supply, and level shifter,” 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 79-82, doi: 10.1109/ISPSD.2019.8757646.

J. Ortiz Gonzalez, R. Wu, S.N. Agbo, O. Alatise, Robustness and reliability review of Si and SiC FET devices for more-electric-aircraft applications, Microelectronics Reliability, Volumes 100–101, 2019, 113324, ISSN 0026-2714,

J. Ortiz Gonzalez, M. Hedayati, S. Jahdi, B.H. Stark, O. Alatise, Dynamic characterization of SiC and GaN devices with BTI stresses, Microelectronics Reliability, Volumes 100–101, 2019, 113389, ISSN 0026-2714. https://doi.org/10.1016/j.microrel.2019.06.081.

J. O. Gonzalez and O. Alatise, “Challenges of Junction Temperature Sensing in SiC Power MOSFETs,” 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 – ECCE Asia), Busan, Korea (South), 2019, pp. 891-898.

Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. Crosstalk in SiC power MOSFETs for evaluation of threshold voltage shift caused by bias temperature instability. In: 21st European Conference on Power Electronics and Applications – EPE’19 ECCE – EUROPE Genoa, Genoa, Italy, 2-6 Sep 2019 .

Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. Novel method for evaluation of negative bias temperature instability of SiC MOSFETs. Materials Science Forum, 963 . pp. 749-752. doi:10.4028/www.scientific.net/MSF.963.749 (In Press) 2019

J. O. Gonzalez, O. Alatise and P. Mawby, “Characterization of BTI in SiC MOSFETs Using Third Quadrant Characteristics,” 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 207-210. doi: 10.1109/ISPSD.2019.8757624

Davletzhanova, Zarina, Dai, Tianxiang, Alatise, Olayiwola M., Gonzalez, Jose Ortiz, Mawby, Philip. A., Bonyadi, Roozbeh and Chan, Chun Wa “Safe-Operating-Area of Snubberless Series Connected Silicon and SiC power devices,” 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, 2018, pp. 1875-1881. doi: 10.1109/ECCE.2018.8557402

J. O. Gonzalez and O. Alatise, “Impact of the Gate Oxide Reliability of SiC MOSFETs on the Junction Temperature Estimation Using Temperature Sensitive Electrical Parameters,” 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, 2018, pp. 837-844. doi: 10.1109/ECCE.2018.8557810

Davletzhanova, Zarina, Alatise, Olayiwola M., Bonyadi, Roozbeh, Gonzalez, Jose Ortiz, Chan, Chun Wa, Bonyadi, Yeganeh, Jennings, Mike and Mawby, P. A. “Impact of Leakage Currents on Voltage Sharing in Series Connected SiC Power MOSFETs and Silicon IGBT Devices,” 2018 20th European Conference on Power Electronics and Applications (EPE’18 ECCE Europe), Riga, 2018, pp. P.1-P.10.

J. A. O. González and O. Alatise, “A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets,” in IEEE Transactions on Power Electronics, vol. 34, no. 6, pp. 5737-5747, June 2019. doi: 10.1109/TPEL.2018.2870067

J. Ortiz Gonzalez, O. Alatise, Bias temperature instability and condition monitoring in SiC power MOSFETs, Microelectronics Reliability, Volumes 88–90, 2018, Pages 557-562, ISSN 0026-2714,

Z. Davletzhanova, O. Alatise, R. Bonyadi, J. O. Gonzalez and T. Dai, “Characterization of Voltage Divergence in Series Connected SiC Trench MOSFETs and Si IGBTs,” PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2018, pp. 1-7.

Davletzhanova, Z., Alatise, O., Bonyadi, R., Ortiz-Gonzalez, J., Dai, T., Jennings, M., Ran, L. and Mawby, P. “A Technology Analysis of Voltage Sharing in Series Connected Power Devices,” 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia), Niigata, 2018, pp. 1149-1156. doi: 10.23919/IPEC.2018.8507853