Lead academic: Prof Phil Mellor, University of Bristol
Universities: Bristol, Greenwich, Imperial College London, Manchester, Nottingham and Warwick.
Research Highlights: The Components Theme drew together underpinning research into packaging technologies, passive components, device switching control, reliability modelling and operational management. The overarching focus was to deliver new capabilities in reliable switch units to maximise the potential offered by wide band-gap power semiconductor devices.
- Integration of wide band-gap power semiconductor devices into very high frequency power converters has been achieved using a novel high-efficiency regenerative gate drive. A 3 kW Class E inverter operating at 3 MHz has been demonstrated with >95% efficiency and is being used to develop high power wireless power transfer.
- A novel gate drive capable of actively profiling the gate signal to wide-bandgap devices has been realised. The use of the gate drive has been demonstrated in improved power electronic conversion efficiency with reduce electromagnetic emissions.
- New approaches to real-time condition monitoring of wide band-gap power semiconductor devices have been developed. Temperature sensitive parameters which can be actively monitored through the gate drive have been identified.
Class-E Half-Wave Zero dv/dt Rectifiers for Inductive Power Transfer – George Kkelis, David C. Yates, and Paul D. Mitcheson. IEEE Transactions on Power Electronics, Vol. 32, No. 11, November 2017.
Evaluation of SiC Schottky Diodes Using Pressure Contacts – Jose Ortiz Gonzalez,Olayiwola Alatise, Attahir Murtala Aliyu, Pushparajah Rajaguru, Alberto Castellazzi, Li Ran, Philip Mawby and Chris Bailey. IEEE Transactions on Industrial Electronics. doi: 10.1109/TIE.2017.2677348
Impact Of Temperature Imbalance on Junction Temperature Identification for Multiple Chip Modules Using TSEPs – Jose Ortiz Gonzalez, Olayiwola Alatise, Li Ran, Philip Mawby. PCIM Europe 2017, 16 – 18 May 2017, Nuremberg, Germany.
Impact of the gate driver voltage on temperature sensitive electrical parameters for Condition Monitoring of SiC power MOSFETs – J. Ortiz Gonzalez, O. Alatise. Microelectronics Reliability 2017
Pressure Contact Multi-Chip Packaging of SiC Schottky Diodes – Jose Ortiz Gonzalez, Olayiwola Alatise, Philip Mawby, Attahir M. Aliyu and Alberto Castellazzi. 29th International Symposium on Power Semiconductor Devices and IC’s (ISPSD) 2017.
Evaluation of The Impact of the Physical Dimensions and Material of the Semiconductor Chip on the Reliability of Sn3.5Ag Solder Interconnect in Power Electronic Module: A Finite Element Analysis Perspective. P. Rajaguru, H. Lu, C. Bailey, J. Ortiz-Gonzalez, O. Alatise. Microelectronics Reliability 68 (2017) 77–85.
Experimental Investigation on the Effects of Narrow Junction Temperature Cycles on Die-Attach Solder Layer in an IGBT Module – Wei Lai, Minyou Chen, Li Ran, , Shengyou Xu, Nan Jiang, Xuemei Wang, Olayiwola Alatise, and Philip Mawby. IEEE Transactions on Power Electronics, Vol. 32, No. 2, February 2017.
High-Frequency Gap Losses in Nanocrystalline Cores – Yiren Wang, Gerardo Calderon-Lopez, and Andrew J. Forsyth. IEEE Transactions on Power Electronics, Vol. 32, No. 6, June 2017.
Electrothermal Stresses in SiC MOSFET and Si IGBT 3L-NPC Converters for Motor Drive Applications – Zarina Davletzhanova, Olayiwola Alatise, Jose Ortiz-Gonzalez, Sylvia Konaklieva, Roozbeh Bonyadi. PCIM Europe 2017, 16 – 18 May 2017, Nuremberg, Germany.