Lead academic: Prof Philip Mawby, University of Warwick
Research Highlights: The aim of the Devices Theme was to make a significant contribution to semiconductor power device technology performance in a number of strategic areas, including power IC technology, advanced super-junction IGBT structures in silicon, as well as wide band-gap devices in silicon carbide and gallium nitride.
- Advanced Silicon Trench IGBT Architecture – a 20 percent improvement in on-state performance was demonstrated
- Improved SiC Gate Oxidation Processes – the team doubled thechannel mobility compared to standard oxidation processes
- Trench SiC MOSFET development – the team delivered the first 1.2kV, 3.3kV and 10kV powerMOSFETs devices to be built in the UK
Experimental Investigation on the Effects of Narrow Junction Temperature Cycles on Die-Attach Solder Layer in an IGBT Module – Wei Lai, Minyou Chen, Li Ran, Shengyou Xu, Nan Jiang, Xuemei Wang, Olayiwola Alatise and Philip Mawby. IEEE Transactions on Power Electronics, Vol 32. No. 2. February 2017.
UIS failure mechanism of SiC power MOSFETs – Asad Fayyaz, Alberto Castellazzi, Gianpaolo Romano, Michele Riccio, Andrea Irace, Jesus Urresti, Nick Wright.
4H-SiC Schottky diode arrays for X-ray detection – Lioliou, G, Chan, H K, Gohil, T, Vassilevski, K V, Wright, N G, Horsfall, A B and Barnett, A M. (2016)
Impact of Buffer Charge on the Reliability of Carbon Doped AlGaN/GaN-on-Si HEMTs – I. Chatterjee, M. J. Uren, A. Pooth, S. Karboyan, S. Martin-Horcajo, M. Kuball. IEEE 2016
Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS – Ji Hu, Olawiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Petros Alexakis, Li Ran, and Philip Mawby. IEEE Transactions on Industrial Electronics, Vol. 63, No. 4, April 2016
The Effect of Electrothermal Nonuniformities on Parallel Connected SiC Power Devices Under Unclamped and Clamped Inductive Switching – Ji Hu, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Li Ran, Phil p Mawby. IEEE Transactions on Power Electronics, Vol. 31, No. .64, June 2016Philip A. Mawby. IEEE Transactions on Power Electronics, Vol. 31, No. .64, June 2016
Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules – J. Ortiz Gonzalez, A.M. Aliyu, O. Alatise, A. Castellazzi, L. Rana, P.Mawby. Microelectronics Reliability 64 (2016) 434–439
Experimental Demonstration of a Solid-State Damping Resistor for HVDC Applications – Konstantin Vershinin, Ikenna Efika, David Trainer, Colin Davidson, Nick Wright, Amit Tiwari. PCIM Europe 2016, 10 – 12 May 2016, Nuremberg, Germany.